Silicon Carbide (SiC).
Silicon Carbide (SiC) yog thib peb - tiam dav -bandgap semiconductor cov khoom siv los ntawm nws cov hluav taws xob tawg siab, siab thermal conductivity, siab electron saturation drift tshaj tawm, thiab zoo heev tshuaj thiab thermal stability. Nws yog dav siv nyob rau hauv lub hwj chim electronics, RF li, hluav taws xob tsheb, 5G kev sib txuas lus, industrial fais fab mov, aerospace, thiab lwm yam teb. Nws qhov nyuaj thiab nkig ua rau precision machining ib kauj ruam tseem ceeb hauv kev tsim khoom siab -kev ua tau zoo.
Lub tuam txhab Hemei muaj kev txawj ntse hauv kev ua haujlwm zoo ntawm cov ntaub ntawv nyuaj thiab nkig. Peb tau tsim cov txheej txheem polishing zoo thiab ruaj khov thiab kev npaj tshwj xeeb rau SiC cov ntaub ntawv. Cov txheej txheem no ua rau muaj kev tswj xyuas tau zoo los ntawm kev npaj substrate mus rau cov cuab yeej- theem saum npoo tiav, ua tau raws li qhov yuav tsum tau ua kom zoo rau SiC hauv siab -kawg daim ntawv thov xws li fais fab modules thiab microwave RF li.
Daim ntawv thov yuav tsum tau
Lub hom phiaj rau polishing thiab kho nto ntawm SiC cov ntaub ntawv suav nrog:
Txo qhov roughness (Ra) mus rau <0.5 nm.
Ua tiav qhov chaw tiaj tus (TTV) Tsawg dua lossis sib npaug li 1 μm, nrog rau qhov chaw tiaj tus hauv zos (LTV) yog qhov zoo tshaj rau tus nqi no.
Tsim cov chaw tsis muaj khawb, micro- tawg, thiab sub-nto puas tsuaj kom ua tau raws li cov khoom siv- theem kev ua haujlwm hluav taws xob.
Kev sib raug zoo nrog ntau hom polytypes xws li 4H-SiC thiab 6H-SiC, txhawb nqa kev ua haujlwm ntawm 4-nti mus rau 8-nti diameters.
Txhawm rau ua tiav cov hom phiaj no, Hemei cov txheej txheem siv cov txheej txheem kev sib koom ua ke thiab ntau - cov txheej txheem polishing, kom ntseeg tau qhov tseeb ntawm qhov tseeb thiab qhov tseeb ntawm qhov chaw thaum ua tiav.
System Specifications
Hemei's modular polishing tshuab txhawb kev ua haujlwm ntawm SiC wafers / Crystals ntawm ntau qhov ntau thiab tsawg thiab cov duab. Cov txheej txheem tseem ceeb muaj xws li:
HSM{0}}L/LP Series lapping Equipment: Siv rau thawj zaug tshem tawm cov khoom thiab tswj thickness.
HSM-CMP Series Chemical Mechanical Polishing Systems: Siv rau kev ua tiav ultra- du, puas- qhov chaw dawb.
Key Subsystems:
Wafer/Crystal{0}}Specific Bonding Unit (WB).
SJ/ASJ Series Precision Polishing Fixtures.
C-ASJ Drive Head High-Speed Polishing System.
Txheej txheem Flow
Bonding thiab Mounting: SiC qauv yog ib ntus sib koom ua ke rau ib lub phaj thauj khoom siv lub WB bonding unit thiab ces mounted rau polishing fixture.
Rough and Intermediate Polishing: Tshwj xeeb kev sib tsoo yog ua los ntawm HSM-L cov cuab yeej tshem tawm cov txheej txheem- cuam tshuam.
Kev polishing zoo: qhov kawg polishing yog ua los ntawm HSM -CMP system. Cov tsis xws li siab, kev sib hloov ceev, thiab slurry txaus tus nqi yog kho nyob rau hauv tiag tiag -lub sij hawm ua kom tiav nano- theem nto smoothness.
Cov txiaj ntsig zoo
Nto Roughness Ra <0.5nm.
Tag Nrho Thickness Variation (TTV) Tsawg dua lossis sib npaug li 1 μm, Local Thickness Variation (LTV) Tsawg dua lossis sib npaug li 0.3 μm.
Cov khoom tshem tawm tus nqi: 0.5 - 2 μm / min (kho tau).
Haum rau SiC wafers nrog diameters Tsawg dua los yog sib npaug li 8 ntiv tes, txhawb nqa ntau hom polytypes xws li 4H/6H-SiC.
Cov ntsiab lus
Hemei Lub Tuam Txhab muab kev ua tiav thiab txhim khu kev qha polishing thiab kev daws teeb meem rau Silicon Carbide cov ntaub ntawv. Qhov kev daws teeb meem no muab cov nano- theem saum npoo zoo thiab kev ua haujlwm hluav taws xob siab, yog li txhawb kev lag luam thiab txhim kho cov cuab yeej ua tau zoo rau SiC hauv siab -kawg teb xws li hluav taws xob hluav taws xob, RF kev sib txuas lus, thiab lub zog tshiab.
